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Model:CR02AM-8-A   Brand:三菱-瑞萨  Amount:少量   Indent Cyc:2-4周

Purchase
Encapsulation
   TO-92

Capability
   SCRs

Parameter(Glances over the detailed information)
   0.3A/400V/30uA(单击下载PDF文件)

Purpose
   三菱产品;
SCR-0.3A单向可控硅
三菱型号:CR02AM系列
◆IT (AV) .......................................................................... 0.3A
◆VDRM .................................................... 200V/300V/400V
◆IGT ...........................................................................100mA

参数型号:
CR02AM-4:0.3A/200V
CR02AM-6:0.3A/300V
CR02AM-8:0.3A/400V
包装型号:
CR02AM-4-A、CR02AM-4-B、CR02AM-4-C
CR02AM-6-A、CR02AM-6-B、CR02AM-6-C
CR02AM-8-A、CR02AM-8-B、CR02AM-8-C

型号后缀字母表示触发电流:
A:  1  ~  30  µA
B: 20 ~ 50  µA
C: 40 ~ 100  µA
The above values do not include the current flowing through the 1kW resistance between the gate and cathode.

封装形式:TO-92
管脚排列:C-A-G (K-A-G)
MITSUBISHI SEMICONDUCTOR(THYRIST)
LOW POWER USE PLANAR PASSIVATION TYPE
APPLICATION: Solid state relay, leakage protector, fire alarm, timer, ringcounter, electric blankets, strobe flasher, other general purpose control applications

MAXIMUM RATINGS:
VRRM(Repetitive peak reverse voltage): -4: 200V,  -6: 300V,  -8: 400V
VRSM(Non-repetitive peak reverse voltage):  -4: 300V,  -6: 400V,  -8: 500V
VR (DC)(DC reverse voltage):  -4: 160V,  -6: 240V,  -8: 320V
VDRM(Repetitive peak off-state voltage):  -4: 200V,  -6: 300V,  -8: 400V
VD (DC)(DC off-state voltage):  -4: 160V,  -6: 240V,  -8: 320V
IT (RMS):(RMS on-state current): 0.47 A
IT (AV): Average on-state current(Commercial frequency, sine half wave, 180° conduction, Ta=30°C): 0.3 A
ITSM: Surge on-state current(60Hz sine half wave 1 full cycle, peak value, non-repetitive): 10 A
I2t: I2t for fusing(Value corresponding to 1 cycle of half wave 60Hz, surge on-state current): 0.4 A2s
PGM: Peak gate power dissipation: 0.1 W
PG (AV): Average gate power dissipation: 0.01 W
VFGM: Peak gate forward voltage: 6 V
VRGM: Peak gate reverse voltage: 6 V
IFGM: Peak gate forward current: 0.1 A
Tj/工作结温: Junction temperature: -40~+125 °C
Tstg/储存温度: Storage temperature:  -40~+125 °C
每粒重量/Weight: 0.23 g

ELECTRICAL CHARACTERISTICS:
IRRM: Repetitive peak reverse current(Tj=125°C, VRRM applied): ≤0.1 mA
IDRM: Repetitive peak off-state current(Tj=125°C, VDRM applied, RGK=1kΩ): ≤0.1 mA
VTM: On-state voltage(Ta=25°C, ITM=0.6A, instantaneous value): ≤1.6 V
VGT: Gate trigger voltage(Ta=25°C, VD=6V, IT=0.1A): <0.8 V
VGD: Gate non-trigger voltage(Tj=125°C, VD=1/2VDRM, RGK=1kΩ): ≥0.2 V
IGT: Gate trigger current(Tj=25°C, VD=6V, IT=0.1A): 1~100 µA
IH: Holding current(Tj=25°C, VD=12V, RGK=1kΩ): ≤3 mA
Rth (j-a): Thermal resistance(Junction to ambient): ≤180 °C/W

包装规格:
袋装/盒装,白色纸盒,每盒6包
每包500PCS,每盒3000  PCS
器件品牌: 三菱(瑞萨)半导体原装正品
最小包装单位:盒/3K
库存状况: 现货
可供单价: ¥1.80元/PCS
销售热线: 0755-27801765、27832499、27832599

Remark
   产品销售热线:0755-27832499、27832599、27801765、61128038

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